Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

A correction to Whipple's law for ion-trap Current

We have analyzed a phenomenon heretofore ignored in the analyses of ion traps, which are used to determine ion temperature, among other plasma parameters, in planetary ionospheres: ions that are rejected by the trap perturb the plasma well ahead of the Debye sheath at the front of the trap.The determination of the perturbed plasma flow is found to depend on the fact that the ionospheric plasma be stable to quasineutral, ion-acoustic perturbations.